JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92S Plastic-Encapsulate Transistors
2SA933AS TRANSISTOR (PNP)
FEATURES ·Excellent hFE Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base
Voltage
-60 V
VCEO
Collector-Emitter
Voltage
-50
V
VEBO
Emitter-Base
Voltage
-6 V
IC Collector Current
-150 mA
PC
Collector Power dissipation 300
mW
TJ Junction Temperature Tstg Storage Temperature
150 ℃
-55~+150
℃
TO-92S
1.
EMITTER 2.
COLLECTOR 3.
BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown
voltage Collector-emitter breakdown voltag...