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Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1051
(0.
4)
Unit: mm
6.
9±0.
1 (1.
5) (1.
5)
3.
5±0.
1
2.
5±0.
1 (1.
0)
(1.
0) 2.
0±0.
2 2.
4±0.
2
1.
0±0.
1
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating −50 −40 −5 −1.
5 −3 1 150 −55 to +150
Unit V V V A A W °C °C
3 (2.
5) 2 (2.
5) 1
1.
25±0.
05
■ Absolute Maximum Ratings Ta = 25°C
(0.
85) 0.
55±0.
1
0.
45±0.
05
1: Base 2: Collect...