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Transistors
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification For DC-DC converter For stroboscope ■ Features
• Low collector-emitter saturation
voltage VCE(sat) • Large collector current IC
Unit: mm
5.
9±0.
2 4.
9±0.
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −30 −20 −7 −5 −10 1 150 −55 to +150 Unit V V
1 2 3 0.
45+0.
2 –0.
1 (1.
27) (1.
27) 0.
45+0.
2 –0.
1
13.
5±0.
5
0...