2SB0952

2SB0956 : Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –20 –20 –5 –2 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak coll.

2SB0953A : Power Transistors 2SB0953 (2SB953), 2SB0953A (2SB953A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 0.7±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0953 2SB0953A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −40 −50 −20 −40 −5 −7 −12 30 2 150 −55 to +150 °C °C V A A W V Unit V 16.7±0.3 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 Collector-em.

2SB0953 : Power Transistors 2SB0953 (2SB953), 2SB0953A (2SB953A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 0.7±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0953 2SB0953A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −40 −50 −20 −40 −5 −7 −12 30 2 150 −55 to +150 °C °C V A A W V Unit V 16.7±0.3 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 Collector-em.

2SB0952A : Power Transistors 2SB0952 (2SB952), 2SB0952A (2SB952A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching Unit: mm ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0952 2SB0952A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −40 −50 −20 −40 −5 −7 −12 30 1.3 150 −55 to +150 Unit V 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0952 (Base open) 2S.