Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.
0+0.
5 –0.
1
Unit: mm
3.
2±0.
2
■ Features
• High collector-base
voltage (Emitter open) VCBO • High collector-emitter
voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation
voltage VCE(sat)
φ 3.
16±0.
1
3.
8±0.
3
11.
0±0.
5
1.
9±0.
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating ...