isc Silicon PNP Darlingtion Power Transistor
2SB1022
DESCRIPTION ·High DC C urrent Gain-
: hFE= 2000(Min.
)@IC= -3A ·Low Collector Saturation
Voltage-
: VCE(sat)= -1.
5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1417 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25...