SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1122
Features
Adoption of FBET process.
.
Very small size making it easy to provide highdensity hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW
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SMD Type
2SB1122
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandw...