2SB1163

isc Silicon PNP Power Transistor 2SB1163 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications ABSOLUTE MAXIMUM ...