Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For
voltage switching Complementary to 2SD1746 ■ Features
• Low collector-emitter saturation
voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment
12.
6±0.
3 7.
2±0.
3 (1.
0) (1.
0)
Unit: mm
7.
0±0.
3 3.
0±0.
2 2.
0±0.
2 3.
5±0.
2
0˚ to 0.
15˚
2.
5±0.
2
1.
1±0.
1
1.
0±0.
2
0.
75±0.
1 0.
4±0.
1 2.
3±0.
2 4.
6±0.
4
0.
9±0.
1 0˚ to 0.
15˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage...