isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Complement to Type 2SD1773 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for midium -speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO
Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-7
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
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