Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
Unit: mm
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
s Features
q q q
1.
5 R0.
9 R0.
9
0.
4
2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
High collector to base
voltage VCBO.
High collector to emitter
voltage VCEO.
Low collector to emitter saturation
voltage VCE(sat).
1.
0
0.
45±0.
05 1
1.
0±0.
1
R
0.
7
0.
85
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2
Unit V V V mA mA W ˚C ˚C
1:Base 2:Colle...