DATA SHEET
SILICON POWER TRANSISTOR
2SB1261-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.
3 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2
Tj Tstg
−60 −60 −7.
0 −3.
0 −5.
0 −0.
5 2.
0 10 150 −55 to +150
V V...