DatasheetsPDF.com

2SB1261

Part Number 2SB1261
Manufacturer LGE
Title PNP Transistor
Description 2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features — High hFE hFE=100 to 400 — Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM R...
Features — High hFE hFE=100 to 400 — Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -3 PD Collector Power Dissip...

File Size 296.75KB
Datasheet 2SB1261 PDF File









Similar Ai Datasheet

2SB1261 : PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO VEBO IC ICP IB PC Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation Tj ,Tstg Junction and Storage temperature range *1: When mountef on a 40*40*0.7mm ceramic board. -60 -7 -3 -5 -0.5 0.5 2 *1 -55 to +150 V V A A A W .

2SB1261 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -7 -3 1 125 150 -55~+150 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO .

2SB1261 : 2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features hFE ,,。 Excellent hFE linearity, low VCE(sat), high PC. / Applications 、,。 Audio frequency amplifier and switching, especially in hybrid integrated circuits applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 100~200 L 160~320 K 200~400 http://www.fsbrec.com 1/6 2SB1261 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Coll.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)