isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1500(Min.
)@IC= -5A ·Low Collector Saturation
Voltage-
: VCE(sat)= -1.
5V(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Current-Peak
-100
V
-100
V
-7
V
-10
A
-15
A
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Pow...