isc Silicon PNP Power Transistor
2SB1293
DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation
Voltage
: VCE(sat)= -1.
0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1896 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
-100
V
VCEO Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
40
W
150
...