Power Transistors
2SB1299
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1273
0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2
Unit: mm
4.
2±0.
2
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.
5±0.
2
16.
7±0.
3
φ3.
1±0.
1
4.
0
14.
0±0.
5
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25...