Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.
9±0.
1
0.
4
2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
s Features
q q q
1.
5
1.
5 R0.
9 R0.
9
0.
85
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
3
2
1
2.
5
2.
5
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion
or more, and th...