isc Silicon PNP Power Transistor
2SB1373
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2066 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-160
V
VCEO
Collector-Emitter
Voltage
-160
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-20
A
120 W
2.
5
150
℃
Ts...