isc Silicon PNP Darlington Power Transistor
2SB1381
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V, IC= -2.
5A) ·Low Collector Saturation
Voltage-
: VCE(sat)= -1.
5V(Max)@ (IC= -2.
5A, IB= -5mA) ·Complement to Type 2SD2079 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-100
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-7
V
IC
Collector Current-Continuous
-5
...