isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 2000( Min.
) @(IC= -8A, VCE= -4V) ·Low Collector Saturation
Voltage-
: VCE(sat)= -1.
5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
2SB1382
APPLICATIONS
·Designed for chopper regulator, DC motor driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO
Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-16
A...