isc Silicon PNP Power Transistor
2SB1392
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min.
) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-70
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
2 W
25
150
℃
Tstg
Storage Temperature R...