Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD2137 and 2SD2137A
Unit: mm
s Features
q q q
Parameter Collector to base
voltage Collector to 2SB1417 2SB1417A 2SB1417
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –60 –80 –60 –80 –6 –5 –3 15 2.
0 150 –55 to +150
Unit V
2.
5±0.
2
s Absolute Maximum Ratings
13.
0±0.
2 4.
2±0.
2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
5.
0±0.
1 10.
0±0.
2 1.
0
90°
1.
2±0.
1
C1.
0 2.
25±0.
2
18.
0±0.
5 Solder Dip
0.
35±0.
1
0.
65±0.
1 1.
05±0.
1 0.
55±0.
1
emitter ...