Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.
2V(Typ.
) (IC/IB=-2A/-0.
1mA).
• Excellent DC current gain characterisitics.
• Complementary the 2SD2150.
2SB1424 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-20
VCEO
-20
VEBO
-6
IC -3
PC 0.
5
Tstg -55to +150
Unit
V V V A W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown
voltage
VCBO
IC=-50μA IE=0
Collector-emitter breakdown
voltage Emitter-base breakdown vo...