isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation
Voltage-
: VCE(sat)= -2.
5V(Max.
)@IC= -4A ·Complement to Type 2SD2275 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications ·Optimum for 55W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipa...