isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-140
V
VCEO
Collector-Emitter
Voltage
-140
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
1
A
100
W
150
℃
Tstg
Storage Temper...