isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.
) @(IC= -6A, VCE=- 4V) ·Low Collector Saturation
Voltage-
: VCE(sat)= -2.
5V(Max)@ (IC= -6A, IB= -6mA) ·Complement to Type 2SD2438 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-160
V
VCEO
Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Co...