Power Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.
0±0.
2 4.
2±0.
2
5.
0±0.
1 10.
0±0.
2 1.
0
q q q
2.
5±0.
2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.
2±0.
1
18.
0±0.
5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage t...