SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB649 2SB649A
DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown
voltage VCEO:-120/-160V ·High current -1.
5A ·Low saturation
voltage,excellent hFE linearity
APPLICATIONS ·For low-frequency power
amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base
voltage
2SB649 2SB649A
Open emitter
VCEO
Collector-emitter
voltage
2SB649 2SB649A
Open base
VEBO IC ICM
PD
Tj Tstg
Emitter-base
voltage Collector current (DC) Collector current-Peak
Total power dis...