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2SB686

Part Number 2SB686
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS. 15.9MAX. Unit in mm 03.2±Q .2 ...
Datasheet 2SB686





Overview
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS.
15.
9MAX.
Unit in mm 03.
2±Q .
2 FEATURES • Complementary to 2SD716.
• Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current 'EBO ic Emitter Current Collector Power DissipFation ~ .
(Tc=25°c: Junction Temperature PC Storage Temperature Range L stg RATING -100 -100 -5 60 150 -55VL50 UNIT V ^W,s 4- °[ d =i + 0.
30 1.
0—0.
25 w MM 5.
45 ±0.
2 5.
45±0.
2 n° —u 0? ^1 1 a 00 ^n 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER ...






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