SMD Type
PNP Silicon Epitaxial Transistor 2SB736
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
+0.
1 2.
4-0.
1
Micro package.
Complementary to 2SD780.
High DC Current Gain: hFE = 200 TYP.
(VCE = -1.
0 V, IC = -50 mA)
+0.
1 1.
3-0.
1
Features
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -60 -5.
0 -300 200 150 -55 to +150 Unit V V V mA mW
Electrical Characteristi...