2SB755
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown
Voltage VCEO=-150V (Min.
) High Transition Frequency : f T=20MHz (Typ.
) Complementary to 2SD845.
Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current
Emitter Current Collector Power Dissipation „
I (Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO
RATING -150
v EBO IC
-5 -12
IE 12
PC 120 Ti 150
Tstg -55^,150
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
JEDEC
EIAJ TOSHIBA
2 — 34 A 1A
Weigh...