Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, Low VCE(sat) PNP TO-3P-3L
http://onsemi.
com
Features
• Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Collector Current (Pulse)
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25°C
Conditions
Ratings -160 -140 --6 --12 --20 2.
5 120 150
--55 to +150
Unit V V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device.
Maximum Rating...