isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3.
5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = -1.
5V(Max)@ IC= -3.
5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers,
voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-70
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Colle...