DATA SHEET
SILICON POWER TRANSISTOR
2SB963-Z
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
DESCRIPTION
The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits.
R
FEATURES
• High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z
PACKAGE DRAWING (Unit: mm)
6.
5 ±0.
2 5.
0 ±0.
2 4.
4 ±0.
2
4
Note
1.
5
+0.
2 −0.
1
2.
3 ±0.
2 0.
5 ±0.
1 Note
5.
6 ±0.
3 9.
5 ±0.
5
5.
5 ±0.
2
123
1.
0 ±0.
5 0.
4 MIN.
0.
5 TYP.
2.
5 ±0.
5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base
voltage Collector to Emitter
voltage Emitter to Base
voltage Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation Note 2 Junction Temperature Storage Temperature
VCBO VCE...