isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -50V(Min) ·Collector Power Dissipation-
: PC= 40W@ TC= 25℃ ·Low Collector Saturation
Voltage-
: VCE(sat)= -0.
4V(Max)@ IC= -4A ·Complement to Type 2SD1363 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-70
V
VCEO
Collector-Emitter
Voltage
-50
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation @Ta=...