isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1161
DESCRIPTION ·With TO-66 Package ·Low collector saturation
voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for low frequency high
voltage power amplifier
TV vertical deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
200
V
VCEO
Collector-Emitter
Voltage
120
V
VEBO IC PC TJ Tstg
Emitter-Base
Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
6
V
1.
0
A
15
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYM...