isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1195
DESCRIPTION ·With TO-3 Package ·High
voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
200
V
200
V
5
V
2.
5
A
100
W
150
℃
-55~150
℃
isc website:www.
iscsemi.
com
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