Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
s Features
q High transition frequency fT.
13.
5±0.
5
/ s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
e e) Collector to base
voltage
VCBO
30
V
c e.
d typ Collector to emitter
voltage VCEO
20
V
n d stag tinue Emitter to base
voltage
VEBO
2.
3±0.
2
3
V
le on Collector current
IC
50
mA
a elifecyc , disc Collector power dissipation PC
400
mW
n u ct ped Junction temperature
Tj
150
˚C
rodu d ty Storage temperature
Tstg
–55 ~ +150
˚C
+0.
2
0.
45 –0.
1 1.
27
+0.
2
0.
45 –0.
1 1.
27
123 2.
54±0.
15
1:Emitter...