isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1308
DESCRIPTION ·With TO-3 Package ·High
voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For TV horizontal deflection output application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
1500
V
400
V
5
V
7
A
50
W
-65~200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
...