isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1722
DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown
voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
300
V
VCEO Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
2
A
1.
8
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc...