isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION ·High Power Gain-
: Gpe≥ 9.
2dB,f= 175MHz, PO= 1W; VCC= 13.
5V ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for RF power
amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
40
V
VCEO
Collector-Emitter
Voltage RBE= ∞
17
V
VEBO
Emitter-Base
Voltage
4
V
IC
Collector Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
0.
6
A
5 W
1
150
℃
Tstg
Storage T...