isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2166
DESCRIPTION ·High Power Gain-
: Gpe≥ 13.
8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for 3 to 4 watts output power
amplifiers in HF band
mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
45
V
VCER
Collector-Emitter
Voltage RBE= 10Ω
45
V
VEBO
Emitter-Base
Voltage
4
V
IC
Collector Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
4
A
12.
5 W
1.
5
150
℃
Tstg
Storage Temp...