isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for video applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
300
V
VCEO Collector-Emitter
Voltage
300
V
VEBO Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.
1
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2371
isc website:www.
iscsemi.
com
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