LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1 BASE
3 COLLECTOR
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter
Voltage
V CEO
Collector–Base
Voltage
V CBO
Emitter–Base
Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
50 V 60 V 7.
0 V 150 mAdc 0.
2 W 150 °C -55 ~+150 °C
DEVICE MARKING
2SC2412K*LT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
)
Characteristic
Collector–Emitter Breakdown
Voltage (IC = 1 mA) Emitter–Base Breakdown
Voltage (IE = 50 µA) Collector–Base Breakdown
Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60...