TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
· High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 800 160 300 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current g...