isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator ·Motor controls ·Ultrasonic oscillators ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
450
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
150
W
175
℃
Tstg
Storage...