isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1216 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
180
V
VCEO
Collector-Emitter
Voltage
180
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCH...