Transistors
2SC2925
Silicon NPN epitaxial planar type
For low-frequency output amplification
Unit: mm
5.
0±0.
2
4.
0±0.
2
■ Features
5.
1±0.
2
• High forward current transfer ratio hFE • Low collector-emitter saturation
voltage VCE(sat)
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
0.
7±0.
2 12.
9±0.
5
/ Parameter
Symbol Rating
Unit
e Collector-base
voltage (Emitter open) VCBO
60
V
pe) Collector-emitter
voltage (Base open) VCEO
50
V
nc d ge.
ed ty Emitter-base
voltage (Collector open) VEBO
15
2.
3±0.
2
V
sta tinu Collector current
IC
0.
7
A
a e cycle iscon Peak collector current
ICP
1.
5
A
life d, d Collector power dissipation
PC
750
mW
n u duct type Junction temperature...