isc Silicon NPN Power Transistor
2SC2979
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 0.
75A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-
voltage, high-speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
900
V
VCEO Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC...