isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
800
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
90
W
150
℃
Tstg
Storage Temperature Range
-55~1...